Samsung begins mass production of 512GB eUFS storage

Samsung begins mass production of 512GB eUFS storage

Imagine pairing a ton of storage alongside Qualcomm's Snapdragon 845 system-on-chip (SoC), or Samsung's recently announced Exynos 9810 (Samsung typically uses two SoCs for its flagship phones, tapping its own silicon for models that ship internationally and Qualcomm's hardware for USA variants). An industry first, these capacious storage components are fabricated from eight 64-layer 512Gb Samsung V-NAND chips plus a controller chip in a package as pictured below.

Samsung says the read and write speeds have also improved.

The new 512 GB UFS chip from Samsung uses two full-duplex HS-Gear3 lanes with 5.8 GT/s data transfer rate per lane and comes in standard 11.5×13 mm package. Samsung says that its fast eUFS storage is ideal for next gen devices which could bump into "potential limitations in system performance that can occur with the use of micro SD cards".

Given the timing of the announcement, it is only a matter of time before manufacturers adopt the 512GB eUFS solution into their products especially in mobile devices.

Messi's statue in Argentina has its legs cut off
In January, Messi's statue was discovered without its top half, as vandals apparently made off with its torso, arms and head. A number of fans treat him as an outsider because he left for Spain at the young age of 13.

Samsung says that the 64-layer 512Gb V-NAND's advanced circuit design and new power management technology in the 512GB eUFS' controller can minimize the increase in energy it consumes. Although only claims for the moment, Samsung said it will be able to store 130 10 minute 4K Ultra HD video clips, ten times as many as a 64 GB eUFS.

Samsung's also announced that it "intends to steadily increase an aggressive production volume for its 64-layer 512Gb V-NAND chips, in addition to expanding its 256Gb V-NAND production". We also expect to see the rollout of Samsung's own 2018 flagship Galaxy S9 devices at that time. That's eight times faster than a typical microSD card. However, if the company starts using this storage module, we may be facing the prospects of losing the microSD card slot.

As for raw performance, Samsung's 512GB eUFS boasts sequential read and write speeds of up to 860MB/s and 255MB/s, respectively. It's a remote possibility for now, and even if flagships are released with variants having 512GB of storage, they are sure to be priced extremely high.

It's possible Samsung includes these new chips in its next-gen smartphones, including the still-unannounced Galaxy S9 or Galaxy Note 9, both expected to launch sometime next year.